砷化铝是一种半导体材料，它的晶格常数跟砷化镓类似。砷化铝的晶系为等轴晶系，熔点是1740 °C，密度是3.76 g/cm³，而且它很容易潮解。

Aluminium arsenide or aluminum arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide. (AlAs) can form a superlattice with gallium arsenide (GaAs) which results in its semiconductor properties. Because (GaAs) and (AlAs) have almost the same lattice constant, the layers have very little induced strain, which allows them to be grown almost arbitrarily thick. This allows for extremely high performance high electron mobility, HEMT transistors, and other quantum well devices.